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Design of power optimized memory circuit using High Speed Transreceiver Logic IO Standard on 28nm Field Programmable Gate Array

机译:使用高速收发器逻辑IO标准在28nm现场可编程门阵列上设计功耗优化的存储电路

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In this work, we designed a power efficient memory circuit using family of various HSTL IO Standards on 28nm Field Programmable Gate Array (FPGA). Nine different HSTL IO Standards are compared with each other to search the most power efficient one. We validated our circuit with different HSTL IO Standards and on Different frequency range to obtain a most power efficient circuit. In our experiment, there is 87.44% power reduction when HSTL_I is replaced with HSTL_I_DCI_18 on 1 GHz frequency and 76.32% power reduction where we use HSTL_I_12 at place of HSTL_I_DCI_12. According to this experiment, HSTL_I is proved a best energy efficient IO Standard when compared with any other family of HSTL. To design this energy efficient memory circuit we are using Verilog as HDL, Xilinx ISE14.6 simulator with kintex-7 FPGA.
机译:在这项工作中,我们在28nm现场可编程门阵列(FPGA)上使用各种HSTL IO标准系列设计了一种省电存储器电路。相互比较了九种不同的HSTL IO标准,以搜索最节能的标准。我们用不同的HSTL IO标准和不同的频率范围验证了我们的电路,从而获得了最省电的电路。在我们的实验中,当在1 GHz频率上将HSTL_I替换为HSTL_I_DCI_18时,功率降低了87.44%,而在我们使用HSTL_I_DCI_12代替HSTL_I_DCI_12的情况下,功率降低了76.32%。根据该实验,与任何其他HSTL系列相比,HSTL_I被证明是最佳的节能IO标准。为了设计这种节能存储电路,我们将Verilog用作HDL,将Xilinx ISE14.6模拟器与kintex-7 FPGA配合使用。

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