Magnetic field sensitivity of poly-Si Hall device improved by high voltage application

机译：高压应用提高了多晶硅霍尔器件的磁场灵敏度

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We have improved magnetic field sensitivities of poly-Si Hall devices by applying high voltages. We achieved the magnetic field sensitivity of 5.13 V/T by applying 580 V. This value is 1000 times higher than the previous magnetic field sensitivity.

机译：通过施加高电压，我们提高了多晶硅霍尔器件的磁场敏感度。通过施加580 V，我们获得了5.13 V / T的磁场灵敏度。该值比以前的磁场灵敏度高1000倍。

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来源
《2014 IEEE International Meeting for Future of Electron Devices, Kansai》|2014年|1-2|共2页
会议地点 Kyoto(JP)
作者
Yoshikawa Akito; Tadokoro Daiki; Yamaguchi Yohei; Matsuda Tokiyoshi; Kimura Mutsumi; Ozawa Tokuro; Aoki Koji; Kuo Chih-Che;
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作者单位

Dept. of Electronics and Informatics, Ryukoku Univ., Otsu, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Films; Hall effect; Heating; Magnetic fields; Real-time systems; Sensitivity; Silicon; Hall device; high voltage; magnetic field; poly-Si; sensitivity;

机译：电影；霍尔效应加热;磁场;实时系统；灵敏度;硅;霍尔装置；高压;磁场;多晶硅灵敏度;;

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专利

1. Magnetic-Field Area Sensor Using Poly-Si Micro Hall Devices [J] . Yamaguchi Y., Hashimoto H., Kimura M., Electron Device Letters, IEEE . 2010,第11期

机译：使用多晶硅微型霍尔器件的磁场区域传感器
2. Analysis of the hall effect in micro poly-Si hall devices and origin of offset voltages [J] . Yamaguchi Y., Hashimoto H., Segawa T., Electrochemical and solid-state letters . 2011,第6期

机译：分析微多晶硅霍尔器件中的霍尔效应和失调电压的来源
3. 3-D Mapping of Sensitivity of Graphene Hall Devices to Local Magnetic and Electrical Fields [J] . Rajkumar, R.K., Manzin, IEEE Transactions on Magnetics . 2013,第7期

机译：石墨烯霍尔器件对局部磁场和电场的3D映射
4. Magnetic field sensitivity of poly-Si Hall device improved by high voltage application [C] . Yoshikawa Akito, Tadokoro Daiki, Yamaguchi Yohei, Institute of Electrical and Electronics Engineers International Meeting for Future of Electron Devices, Kansai . 2014

机译：高压应用改善多Si霍尔装置的磁场敏感性
5. Safety and performance considerations for interactions between electromagnetic fields and biological tissue: Applications to high field human magnetic resonance imaging and tissue-implanted devices. [D] . Tang, Lin. 2010

机译：电磁场与生物组织之间相互作用的安全性和性能考虑：在高场人体磁共振成像和组织植入设备中的应用。
6. Dependence of Quantized Hall Effect Breakdown Voltage on Magnetic Field and Current [O] . M. E. Cage 1993

机译：量化霍尔效应击穿电压对磁场和电流的依赖性
7. On the calculation of the response of (planar) hall-effect devices to inhomogeneous magnetic fields [O] . Fluitman, J.H.J. 1981

机译：关于（平面）霍尔效应器件对非均匀磁场的响应的计算
8. Preparation of Silicon for High Voltage Power Devices Using Magnetic Fields andNeutron Transmutation [R] . Selim, F. A. 1990

机译：利用磁场和中子嬗变制备高压功率器件用硅

Magnetic field sensitivity of poly-Si Hall device improved by high voltage application

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