Original amplifier using only emitter and base of a Si bipolar transistor

机译：仅使用Si双极晶体管的发射极和基极的原始放大器

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摘要

We demonstrate in this paper that it is possible to operate a certain bipolar transistor as an amplifier using only the emitter and base without using the collector. This study was performed based on the novel hypothesis that the bipolar transistor works by the internal photovoltaic effect.

机译：我们在本文中证明，可以仅使用发射极和基极而不使用集电极来将某个双极型晶体管用作放大器。这项研究基于双极晶体管通过内部光伏效应起作用的新假设进行。

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来源
《2014 IEEE International Meeting for Future of Electron Devices, Kansai》|2014年|1-2|共2页
会议地点 Kyoto(JP)
作者
Okamoto Kensho; Fujita Junichi; Ishikawa Masaki; Hattori Tetsuo;
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作者单位

Department of Electronics, Kagawa University, Takamatsu, Kagawa;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Bipolar transistors; Electrodes; Integrated circuit modeling; Junctions; Photovoltaic effects; Silicon; Transistors; amplifier; bipolar transistor; distar; light-emitting diode; photodiode; photovoltaic effect; transistor;

机译：双极晶体管；电极;集成电路建模；交界处；光伏效应；硅;晶体管；放大器双极晶体管双星发光二极管;光电二极管光电效应晶体管;

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专利

1. Power amplifier performance and modelling of one-emitter-finger GaAlAs/GaAs heterojunction bipolar transistor [J] . Andrieux L., Cazarre A. IEE proceedings. Part G . 1996,第6期

机译：单射指GaAlAs / GaAs异质结双极晶体管的功率放大器性能和建模
2. Power amplifier performance and modelling of one-emitter-fingerGaAlAs/GaAs heterojunction bipolar transistor [J] . Andrieux L., Cazarre A., Bailbe J.P., IEE proceedings. Part G, Circuits, devices and systems . 1996,第6期

机译：单射指GaAlAs / GaAs异质结双极晶体管的功率放大器性能和建模
3. Planarization of emitter-base structure of heterojunction bipolar transistors by doping selective base contact and nonalloyed emitter contact [J] . Goossen K.W., Kuo T.Y. IEEE Transactions on Electron Devices . 1991,第11期

机译：通过掺杂选择性基极接触和非合金发射极接触来平面化异质结双极晶体管的发射极-基极结构
4. Original amplifier using only emitter and base of a Si bipolar transistor [C] . Okamoto Kensho, Fujita Junichi, Ishikawa Masaki, Institute of Electrical and Electronics Engineers International Meeting for Future of Electron Devices, Kansai . 2014

机译：仅使用发射器和Si双极晶体管的基极的原始放大器
5. Indium phosphide-based heterojunction bipolar transistors for high-speed and RF power applications: Advanced emitter-base designs. [D] . Yi, Changhyun. 2002

机译：适用于高速和RF功率应用的基于磷化铟的异质结双极晶体管：先进的发射极基极设计。
6. Synthetic plasma and silicon tubular harness-based pure biological transistor amplifier circuit [O] . Pandya Killol, Kosta Shivprasad 2017

机译：基于合成等离子体和硅管的纯生物晶体管放大器电路
7. Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers [O] . Bruce, SPO, Vandamme, LKJ Lodewijk = Lode, Rydberg, A Anders 1999

机译：使用跨阻放大器测量SiGe异质结双极晶体管中的低频基极和集电极电流噪声和相干性
8. Materials Data and Theory for Electron Emitters. Design of Wideband Microwave Amplifiers Based on a Combination of Heterojunction Bipolar Transistors, Cold Cathodes, and Coplanar Waveguide Technologies. [R] . Cahay, M., Roenker, K. P. 2001

机译：电子发射体的材料数据和理论。基于异质结双极晶体管，冷阴极和共平面波导技术组合的宽带微波放大器设计。

Original amplifier using only emitter and base of a Si bipolar transistor

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