Stoichiometric amorphous hydrogenated silicon carbide thin film synthesis using DC-saddle plasma enhanced chemical vapour deposition

摘要

Silicon carbide is a versatile material amenable to a variety of applications ranging from electrical insulation, surface passivation and diffusion barrier to optical devices. The DC saddle-field plasma enhanced chemical vapour technique is an alternative large area deposition technique. Here we report on the synthesis of stoichiometric hydrogenated amorphous silicon using the dc saddle-field PECVD technique. We also report on the attainment of very smooth surface morphology for the stoichiometric a-SiC:H films in contrast to low carbon content films. Surface roughness of 1 nm rms was demonstrated for films grown at a temperature as low as 225°C.