Pulsed I(V) — pulsed RF measurement system for microwave device characterization with 80ns/45GHz

摘要

This paper presents a combined pulsed I(V) — pulsed RF state-of-the-art measurement system. Isothermal DC and AC measurement data can be achieved allowing a complete characterization and exploration of the save operating area (SOA) of advanced SiGe:C HBTs. System configuration, measurements and accuracy issues are presented.