Reduction of ambipolarity in carbon nanotube field-effect transistor by non-uniform source/ drain doping and increased extension length

摘要

The effect of non-degenerate doping on the ambipolarity of a conventional carbon nanotube field effect transistor (C-CNFET) is investigated in this paper together with different source/drain extension lengths. The ambipolarity ratio for C-CNFET can be reduced by eight orders of magnitude, by using reduced doping levels and increased extension lengths, at the cost of one order of magnitude reduction in on-state current.