首页> 外文会议>2012 5th International Conference on Computers and Devices for Communication >Effects of width of the quantum well on the shift in transition energy with operating current in InxGa1#x2212;xN/GaN quantum well diodes
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Effects of width of the quantum well on the shift in transition energy with operating current in InxGa1#x2212;xN/GaN quantum well diodes

机译:InxGa1-xN / GaN量子阱二极管中量子阱宽度对过渡能量随工作电流转移的影响

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摘要

The influence of the well width and the operating current on the transition energies of InxGa1−xN/GaN quantum well (QW) diodes have been studied through the self consistent solution of the Schrödinger and Poisson equations. Large blue shift of the emission energy is observed due to the reduction in the well width. With increase in the current density the emission peak shifts toward higher energy. This shift, which is a major disadvantage of the lighting devices, is minimized by decreasing the width of the QW.
机译:通过自学习研究了阱宽和工作电流对In x Ga 1-x N / GaN量子阱(QW)二极管跃迁能的影响Schrödinger和Poisson方程的一致解。由于阱宽度的减小,观察到发射能量的大蓝移。随着电流密度的增加,发射峰移向更高的能量。通过减小QW的宽度可以最大程度地减小这种偏移,这是照明设备的主要缺点。

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