A 2.25kV, 6.1m#x2126;-cm² 4H-SiC normally-off VJFET

摘要

VJFET is the device commercially available and further research is going on. In this paper a SiC based power VJFET with low specific on resistance and high breakdown voltage is demonstrated. A low specific on resistance of 6.1mΩ-cm² is achieved for a blocking voltage of 2250V by varying its device parameters like channel opening, drift region doping, drift length and the source-drain doping. VJFET demonstrated here do have high baliga's figure of merit calculated as Vbl2/Ron-sp = 827 MW/cm². These simulations are performed on Synopsys TCAD tool.