InAs HEMT for terahertz applications

摘要

InP based high indium concentration high-electron mobility transistors (HEMTs) are an attractive transistor technology for millimeter-wave and terahertz applications1. Ultra-short gate length (Lg) InAlAs/InGaAs HEMTs on InP substrate has been fabricated and demonstrated excellent RF-performance over the past decade2,3. Higher electron mobility and drift velocity can be realized by reducing of Lg and increasing the indium content in the InxGa1-xAs channel. Due to the high electron mobility, velocity and large conduction band offset in InAs, InAs-channel HEMT is promising for high speed and low power logic applications4. In this talk, InAs/InxGa1-xAs channel InP HEMTs are fabricated and evaluated for high-frequency applications.