Nonvolatile Memories for Nano and Giga Electronics

摘要

Memory devices are critical elements in ULS1C. It is also desirable to include memory functions in a-Si:H TFTs for new and novel applications. In this paper, the author reviews and discusses recent developments on two types of nonvolatile memories in his laboratory, i.e., the nanocrystals embedded high-k MOS capacitor and the floating-gate a-Si:H TFT. For the former, the structure, device performance, and reliability are examined. For the latter, charge trapping and detrapping mechanisms and memory functions are investigated. Challenges of these devices toward nano and giga electronics are analyzed.