Geometries and electronic structures of graphene adsorbed on SiO2 (0001) surfaces: The possibility of electronic structure tuning by an insulating substrate

摘要

We demonstrate the possibility of electron-state tuning of graphene adsorbed on (0001) surfaces of SiO2 by using first-principles total-energy calculations. Our calculations suggest that graphene is bound on SiO2 surfaces via weak van der Waals interactions irrespective of surface morphology. In all arrangements of graphene on the different SiO2 surfaces, graphene possesses a small energy gap of up to a few tens of meV at the Dirac cone depending on surface morphology. This suggests a possible application in next-generation electronic nanodevices. In addition to the semiconducting properties with the substantial energy gap, several surface morphologies lead to p-type doping in graphene.