Development and Design Kit Integration of a Scalable and Statistical High Current Model for Advanced SiGe HBTs

摘要

We present the extraction of a scalable High Current Model (Hicum) for advanced SiGe HBTs and its integration into BiCMOS design kits. Various model choices are reviewed and the extraction of model parameters is described in detail. Separation of the model parameters into intrinsic and extrinsic parts or area and perimeter parts, so as to accomplish proper geometric scaling, is discussed. The applicability of this methodology for technologies with f_T from 40-200GHz and BVCEO between 1.8-6.0V is confirmed and some specific results for a 200GHz HBT are presented. We obtain excellent correlation with data covering DC characteristics, S-parameters up to 100GHz, high-frequency noise parameters, linearity and distortion characteristics. Statistics are developed based on hardware specially processed to reflect process-variations. Monte-Carlo simulations vs process corners are shown for DC current gain and base-emitter voltage.