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Design and Fabrication of Flexible OTFT Array by using Nanocontact Printing

机译:纳米接触印刷设计柔性OTFT阵列

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The high-resolution and large-area flexible OTFT array to use as a driving device for an OLED was designed and fabricated in the nanocontact printing process and organic thin films could be deposited even in a room temperature process. The gate, source, and drain electrode patterns of OTFT were fabricated through the nanocontact printing process using as a mask PDMS stamp on which an SAM used as an etching mask was inked selectively. To fabricate an OTFT array, an E-beam deposition device with a low-temperature inside a chamber was used to deposit Cr as an adhesion layer, to deposit a thin film of Au as an etching layer, and to create a conductive gate electrode through the nanocontact printing on a PEN plastic substrate. High-permittivity parylene-C was deposited at the room temperature using an exclusive deposition device to create an organic dielectric on the fabricated gate electrode and the patterned organic dielectric was etched selectively by O_2 plasma. Channel length of 1um was left on the parylene-C organic dielectric so that source and drain metal electrodes could be patterned and fabricated using the nanocontact printing process. On a contact electrode, an organic active semiconductor layer of pentacene was deposited through e-beam deposition device. The nanocontact printing process using SAM and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths minimize to even sub-micron size, and reduced and optimized the procedure by 10 steps compared with photolithography. Since the process was done in room temperature, there was no pattern transformation, retraction, and shrinking problem appeared. Also, it was possible to improve electric field mobility, to decrease contact resistance, and to reduce threshold voltage by using a big dielectric and fabricate nanopatterns.
机译:在纳米接触印刷工艺中设计和制造了用作OLED驱动装置的高分辨率,大面积柔性OTFT阵列,即使在室温下也可以沉积有机薄膜。 OTFT的栅极,源极和漏极图案是通过纳米接触印刷工艺制成的,使用PDMS印模作为掩膜,在其上选择性地为用作蚀刻掩膜的SAM上墨。为了制造OTFT阵列,使用在腔室内具有低温的电子束沉积装置沉积Cr作为粘附层,沉积Au薄膜作为蚀刻层,并通过形成导电栅电极。在PEN塑料基材上进行纳米接触印刷。使用专用沉积设备在室温下沉积高介电常数的对二甲苯-C,以在制造的栅电极上创建有机电介质,并通过O_2等离子体选择性蚀刻图案化的有机电介质。聚对二甲苯-C有机电介质上留有1um的通道长度,因此可以使用纳米接触印刷工艺对源极和漏极金属电极进行构图和制造。在接触电极上,通过电子束沉积装置沉积并五苯的有机活性半导体层。使用SAM和PDMS压模的纳米接触印刷工艺使得制造OTFT阵列的通道长度最小化甚至达到亚微米尺寸成为可能,并且与光刻相比,通过10个步骤减少和优化了工艺。由于该过程是在室温下完成的,因此没有图案转变,缩回和收缩问题。而且,可以通过使用大的电介质并制造纳米图案来改善电场迁移率,降低接触电阻并降低阈值电压。

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