首页> 外文会议>2003 Nanotechnology Conference and Trade Show Nanotech 2003 Vol.3 Feb 23-27, 2003 California, USA >Photoluminescence and Photoluminescence Excitation Measurements of Eu-doped nano-Si/SiO_2 Thin Films
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Photoluminescence and Photoluminescence Excitation Measurements of Eu-doped nano-Si/SiO_2 Thin Films

机译:Eu掺杂纳米Si / SiO_2薄膜的光致发光和激发光测量

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We synthesized thin films of RF co-sputtered Eu_2O_3, Si and SiO_2 on quartz substrates. Previous time domain PL measurements and four-wave mixing measurements of samples, with and without Eu, gave evidence that is consistent with a possible transfer of electrons from Si nanoparticles to Eu~(3+) ions, resulting in photo-induced transient Eu~(2+) states responsible for an observed whitish PL. We report on PLE measures that let us determine that Eu~(2+) is actually present in the samples, at least during the illumination of the samples, and transmission measurements giving evidence that it coexists with nanoparticles of Si. Meanwhile, Eu~(3+) is also present in some of the samples. If this proposed interaction is confirmed, it has potential for applications in light emitting devices and screens, as well as in sensors. We have already found some success applying this hardy material to Si light sensors, to enhance their sensitivity in the UV range.
机译:我们在石英衬底上合成了RF共溅射Eu_2O_3,Si和SiO_2的薄膜。先前的时域PL测量和样品在有或没有Eu的情况下的四波混合测量都提供了证据,表明电子可能从Si纳米颗粒转移到Eu〜(3+)离子,从而导致光诱导瞬态Eu〜 (2+)个州负责观察到的白色PL。我们报告了P​​LE度量,这些度量使我们可以确定至少在样品照明期间样品中确实存在Eu〜(2+),并且透射率测量提供了证据表明它与Si纳米粒子共存。同时,Eu〜(3+)也存在于一些样品中。如果该提议的交互作用得到确认,则有可能在发光设备,屏幕以及传感器中得到应用。我们已经发现将这种耐高温材料应用于Si光传感器,以增强其在紫外线范围内的灵敏度已经取得了一些成功。

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