A 3D Mesh Generation Method for the Simulation of Semiconductor Processes and Devices

摘要

We present an extended quadtree-octree mesh generation method which is well suited for semiconductor process and device simulation. The method can handle complicated geometries and moving boundaries. In order to describe boundaries and trace boundary movement, we apply the level set method in combination with a local transformation of the grid. The grid is modified only in the vicinity of the boundary, which keeps the computational work involved in the grid generation low, and avoids interpolation of solutions in most of the structure. Topological changes in the structure are easily handled, and the mesh quality and density are maintained throughout a simulation.