ANALYSIS OF THE CAPACITANCE vs. VOLTAGE IN GRADED CHANNEL SOI CAPACITOR

摘要

This work presents for the first time an analysis of the Capacitance vs. Voltage curve in Graded Channel (GC) SOI Capacitor compared to Conventional SOI capacitor. A simple capacitance model and methods to extract parameters are proposed using the conventional SOI capacitor approach. Bidimensional numerical simulations are performed to validate the capacitance model and the proposed methods. The sensitivity of the proposed methods is also evaluated.