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机译:什么在2d van der Waals veridobilayers中致电Rashba分裂
Department of Materials Science and Nanoengineering Rice University Houston Texas 77005 United States;
Department of Materials Science and Nanoengineering Department of Chemistry and Smalley-Curl Institute for Nanoscale Science and Technology Rice University Houston Texas 77005 United States;
机译:电触点的巨大可调性和通过不可忽略的正常电场强度或基于2D Bx /石墨烯(X = P,AS)Van der Wa van Der Wa versobilayer
机译:Biscuthene / 2D硅碳化改用van der Wa vanfilals的可调电子特性
机译:电子特性,联系类型和Rashba分裂二维Graphyne / WSETE VAN DAR WALS异质结构
机译:推进Monolayer 2D NMOS和PMOS晶体管从增长集成到Van der Waals界面工程,实现最终CMOS缩放
机译:单分子(1D)和van der WaaS的密度函数计算Bi-ledered(2D)磁铁
机译:范德华异质双层中从激子超流体到量子异常霍尔的门调谐
机译:什么在2d van der Waals veridobilayers中致电Rashba分裂