Anthracenedicarboximides as Air-Stable N-Channel Semiconductors for Thin-Film Transistors with Remarkable Current On-Off Ratios

摘要

Thin-film transistors based on organic semiconductors (OTFTs) have attracted great scientific and technological interest in the quest for "plastic" electronics. The basic OTFT structure includes three contacts (source, drain, gate), a dielectric, and a semiconductor (Figure 1), with the latter functioning as either a p-channel (hole-transporter) or n-channel (electron-transporter) charge carrier. OTFT p-channel semiconductors have been widely studied and have achieved acceptable device performance and stability. For example, OTFTs based on acene films~(2d) and single-crystals4 can attain hole mobilities μ_h > 1 cm~(-2)/(V s) in ambient. In contrast, n-channel organic semiconductors remain problematic because of the inherent electron trapping tendencies of many materials, especially at the semiconductor—dielectric interface.