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首页> 外文期刊>Journal of the American Chemical Society >X-ray Scattering Study of Thin Films of Poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene)
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X-ray Scattering Study of Thin Films of Poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene)

机译:聚(2,5-双(3-烷基噻吩-2-基)噻吩并[3,2-b]噻吩薄膜的X射线散射研究

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摘要

Poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT, is a semiconducting polymer that forms thin film transistors (TFTs) with high field effect mobility on silicon dioxide dielectrics that are treated with alkyltrichlorosilanes (~0.2 to 0.5 cm~2/V s) but forms TFTs with poor mobility on bare silicon dioxide ( < 0.005 cm~2/V s). The microstructure of spin-coated thin films of PBTTT on these surfaces was studied using synchrotron X-ray diffraction and atomic force microscopy. PBTTT crystallizes with lamellae of π-stacked polymer chains on both surfaces. The crystalline domains are well-oriented relative to the substrate in the as-spun state and become highly oriented and more ordered with thermal annealing in the liquid crystalline mesophase. Although the X-ray scattering from PBTTT is nearly identical on both surfaces, atomic force microscopy showed that the domain size of the crystalline regions depends on the substrate surface. These results suggest that electrical transport in PBTTT films is strongly affected by the domain size of the crystalline regions and the disordered regions between them.
机译:聚(2,5-双(3-烷基噻吩-2-基)噻吩并[3,2-b]噻吩)是一种半导体聚合物,可在二氧化硅电介质上形成具有高场效应迁移率的薄膜晶体管(TFT)用烷基三氯硅烷(〜0.2至0.5 cm〜2 / V s)处理过的薄膜,但在裸露的二氧化硅(<0.005 cm〜2 / V s)上形成迁移率较差的TFT。使用同步加速器X射线衍射和原子力显微镜研究了这些表面上PBTTT旋涂薄膜的微观结构。 PBTTT在两个表面上均带有π堆叠聚合物链的薄片结晶。在初生状态下,晶畴相对于衬底是取向良好的,并且在液晶中间相中通过热退火变得高度取向并且更有序。尽管PBTTT的X射线散射在两个表面上几乎相同,但是原子力显微镜显示,晶体区域的畴尺寸取决于衬底表面。这些结果表明,PBTTT薄膜中的电传输受到晶体区域和它们之间无序区域的畴尺寸的强烈影响。

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