Systematic Improvement in Charge Carrier Mobility of Air Stable Triarylamine Copolymers

摘要

A combination of improved semiconducting polymer molecular design and fabrication techniques has resulted in recent demonstrations of both p- and n-type charge carrier mobilities exceeding application relevant values of 0.01 cm~2/(V s) in field effect transistor devices, fabricated and measured in air over extended periods. However, even in instances where "reasonable" ambient stability is reported, it is often the case that devices driven under high current density (saturation) conditions or where the transistor architecture is bottom gate, with the semiconductor film exposed to ambient conditions, suffer from operational and even storage instabilities, leading to large initial carrier mobilities deteriorating to significantly lower values over short periods.