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首页> 外文期刊>Journal of the American Chemical Society >Disconnection Enhances the Second Harmonic Generation Response: Synthesis and Characterization of Ba_(23)Ga_8Sb_2S_(38)
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Disconnection Enhances the Second Harmonic Generation Response: Synthesis and Characterization of Ba_(23)Ga_8Sb_2S_(38)

机译:断开连接增强第二谐波产生响应:Ba_(23)Ga_8Sb_2S_(38)的合成和表征

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摘要

An unusual zero-dimensional quaternary sulfide, Ba_(23)Ga_8Sb_2S_(38), that crystallizes in the non centrosymmetric polar space group Cmc2_1 was discovered by solid-state reaction of an elemental mixture. The involvement of a second building unit consisting of SbS_3 pyramid and constituting 20% of the structure helped to realize the disconnection of the asymmetric GaS_4 tetrahedra. Such a disconnection leads to the strongest powder second harmonic generation intensity in the IR region among sulfides to date, ~22 times that of commercial AgGaS_2 at an incident laser wavelength of 2.05 μm with the same particle size of 46-74 μm.
机译:通过元素混合物的固相反应,发现了一种在非中心对称极性空间群Cmc2_1中结晶的不寻常的零维季铵盐Ba_(23)Ga_8Sb_2S_(38)。由SbS_3金字塔组成并构成该结构20%的第二个建筑单元的参与有助于实现不对称GaS_4四面体的断开。这种断开导致迄今为止在硫化物中红外区域的粉末二次谐波产生强度最强,在相同的粒径为46-74μm的入射激光波长为2.05μm时,约为商用AgGaS_2的22倍。

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  • 来源
    《Journal of the American Chemical Society》 |2012年第14期|p.6058-6060|共3页
  • 作者单位

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China,Graduate University of Chinese Academy of Sciences, Beijing 100039, People's Republic of China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China,Graduate University of Chinese Academy of Sciences, Beijing 100039, People's Republic of China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China,Graduate University of Chinese Academy of Sciences, Beijing 100039, People's Republic of China;

    Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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