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机译:新型压缩黄铜矿状的Li_2BaM〜(IV)Q_4(M〜(IV)= Ge,Sn; Q = S,Se):很有前景的红外非线性光学材料
Key Laboratory of Functional Materials and Devices for Special Environments, CAS, Xinjiang Technical Institute of Physics and Chemistry of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi, China;
Key Laboratory of Functional Materials and Devices for Special Environments, CAS, Xinjiang Technical Institute of Physics and Chemistry of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi, China;
Key Laboratory of Functional Materials and Devices for Special Environments, CAS, Xinjiang Technical Institute of Physics and Chemistry of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi, China;
Key Laboratory of Functional Materials and Devices for Special Environments, CAS, Xinjiang Technical Institute of Physics and Chemistry of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi, China;
机译:作为新型潜在的红外非线性光学材料,A2SrMIVS4(A = Li,Na; MIV = Ge,Sn)同时显示出较宽的带隙和良好的非线性光学响应
机译:设计有前途的中红外非线性光学材料的新策略:缩小带隙以实现大的非线性光学效率,并降低高激光诱导损伤阈值的热效应
机译:新型红外非线性光学材料BaCdSnSe4和三种新的相关中心对称化合物的研究:Ba2SnSe4,Mg2GeSe4和Ba2Ge2S6
机译:通过使用离子植入和IV族材料的先进退火的局部拉伸和压缩菌株形成高电子和空穴迁移率(Si + C,Si + Ge + Sn)
机译:I2-II-IV-VI4和I4-II-IV2-VI7金刚石状半导体的合成,表征和晶体生长,具有红外线非线性光学应用的电位
机译:作为新型潜在的红外非线性光学材料A2SrMIVS4(A = LiNa; MIV = GeSn)同时显示出较宽的带隙和良好的非线性光学响应
机译:A2SRMIVS4(A = Li,Na; Miv = Ge,Sn)同时表现出宽带隙和良好的非线性光学响应作为新的潜在红外非线性光学材料