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首页> 外文期刊>Journal of the American Chemical Society >New Compressed Chalcopyrite-like Li_2BaM~(IV)Q_4 (M~(IV) = Ge, Sn; Q = S, Se): Promising Infrared Nonlinear Optical Materials
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New Compressed Chalcopyrite-like Li_2BaM~(IV)Q_4 (M~(IV) = Ge, Sn; Q = S, Se): Promising Infrared Nonlinear Optical Materials

机译:新型压缩黄铜矿状的Li_2BaM〜(IV)Q_4(M〜(IV)= Ge,Sn; Q = S,Se):很有前景的红外非线性光学材料

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摘要

Chalcopyrite-type AgGaQ_2 (Q = S, Se) and ZnGeP_2 are the main commercial infrared nonlinear optical (IR NLO) crystals. Unfortunately, performance defects including low laser damage threshold (LDT), harmful two-photon absorption (TPA), or small birefringence limit their application. With this background, four new compressed chalcopyrite-like IR NLO materials Li_2BaM~(IV)Q_4 (M~(IV) = Ge, Sn; Q = S, Se) were successfully synthesized with the typical AgGaQ_2 as templates. Remarkably, Li_2BaGeS_4 and Li_2BaSnS_4 not only maintain the good NLO responses (0.5 and 0.7 × AgGaS_2) but also overcome low LDTs and TPA of commercial chalcopyrites, demonstrating that they satisfy critical demands as promising IR NLO candidates. All of them exhibit phase-matching abilities. Furthermore, the discovery of chalcopyrite-like compounds also provides a feasible design strategy to explore new promising IR NLO materials.
机译:黄铜矿型AgGaQ_2(Q = S,Se)和ZnGeP_2是主要的商业红外非线性光学(IR NLO)晶体。不幸的是,包括激光损伤阈值(LDT)低,有害的双光子吸收(TPA)或双折射小的性能缺陷限制了它们的应用。在此背景下,以典型的AgGaQ_2为模板,成功合成了四种新型的压缩黄铜矿型IR NLO材料Li_2BaM〜(IV)Q_4(M〜(IV)= Ge,Sn; Q = S,Se)。值得注意的是,Li_2BaGeS_4和Li_2BaSnS_4不仅保持了良好的NLO响应(0.5和0.7×AgGaS_2),而且克服了商业黄铜矿的低LDT和TPA,表明它们满足了作为有希望的IR NLO候选物的关键要求。它们都具有相位匹配能力。此外,发现类似黄铜矿的化合物也为探索新的有前景的IR NLO材料提供了可行的设计策略。

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  • 来源
    《Journal of the American Chemical Society》 |2017年第42期|14885-14888|共4页
  • 作者单位

    Key Laboratory of Functional Materials and Devices for Special Environments, CAS, Xinjiang Technical Institute of Physics and Chemistry of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi, China;

    Key Laboratory of Functional Materials and Devices for Special Environments, CAS, Xinjiang Technical Institute of Physics and Chemistry of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi, China;

    Key Laboratory of Functional Materials and Devices for Special Environments, CAS, Xinjiang Technical Institute of Physics and Chemistry of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi, China;

    Key Laboratory of Functional Materials and Devices for Special Environments, CAS, Xinjiang Technical Institute of Physics and Chemistry of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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  • 正文语种 eng
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