Q-switched microchip-lasers with intracavity Raman conversion

摘要

Semi-classical theory of Q-switched microchip - lasers with transient and quasi-stationary intracavity Raman conversion has been developed. Rate wave equations describing generation of Stokes pulses of different orders and their multiwave mixing have been written and discussed in detail. Theoretical results agree well with experiments for passively Q-switched microchip - lasers with intracavity Raman conversion in crystals of Ba(NO_3)_2 and CaMoO_4. It is shown, that intracavity Raman conversion in microchip - lasers represents a simple and effective method of generation of short Stokes pulses with duration as short as 100 ps, energy in the uJ-range and peak power of up to several tens of kW.